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2008-04-08 rev. 2.5 page 1 spu04n60s5 spd04n60s5 cool mos? power transistor v ds 600 v r ds(on) 0.95 ? i d 4.5 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitances ? improved transconductance p g -to251 p g -to252 1 3 2 1 3 2 type package ordering code spu04n60s5 p g -to251 q67040-s4228 spd04n60s5 p g -to252 q67040-s4202 marking 04n60s5 04n60s5 maximum ratings parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 4.5 2.8 a pulsed drain current, t p limited by t j ma x i d p uls 9 avalanche energy, single pulse i d = 3.4 a, v dd = 50 v e as 130 mj avalanche energy, repetitive t ar limited by t jmax 1 ) i d = 4.5 a, v dd = 50 v e ar 0.4 avalanche current, repetitive t ar limited by t j ma x i ar 4.5 a gate source voltage v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t c = 25c p tot 50 w operating and storage temperature t j , t st g -55... +150 c
2008-04-08 rev. 2.5 page 2 spu04n60s5 spd04n60s5 maximum ratings parameter symbol value unit drain source voltage slope v ds = 480 v, i d = 4.5 a, t j = 125 c d v /d t 20 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 2.5 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 2) r thja - - - 35 62 - soldering temperature, *) 1.6 mm (0.063 in.) from case for 10s t sold - - 260 c electrical characteristics, at t j=25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 600 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =4.5a - 700 - gate threshold voltage v gs(th) i d =200 , v gs = v ds 3.5 4.5 5.5 zero gate voltage drain current i dss v ds =600v, v gs =0v, t j =25c, t j =150c - - 0.5 - 1 50 a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =2.8a, t j =25c t j =150c - - 0.85 2.3 0.95 - gate input resistance r g f =1mhz, open drain - 20 - *) to252: reflow soldering, msl3; to251: wavesoldering
2008-04-08 rev. 2.5 page 3 spu04n60s5 spd04n60s5 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =2.8a - 2.5 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 580 - pf output capacitance c oss - 220 - reverse transfer capacitance c rss - 7 - effective output capacitance, 3) energy related c o(er) v gs =0v, v ds =0v to 480v - 20 - pf effective output capacitance, 4) time related c o(tr) - 35 - turn-on delay time t d(on) v dd =350v, v gs =0/10v, i d =4.5a, r g =18 - 55 - ns rise time t r v dd =350v, v gs =0/10v, i d =4.5a, r g =18 - 30 - turn-off delay time t d(off) v dd =350v, v gs =0/10v, i d =4.5a, r g =18 - 60 90 fall time t f - 15 22.5 gate charge characteristics gate to source charge q gs v dd =350v, i d =4.5a - 4.5 - nc gate to drain charge q gd - 11 - gate charge total q g v dd =350v, i d =4.5a, v gs =0 to 10v - 17.6 22.9 gate plateau voltage v (plateau) v dd =350v, i d =4.5a - 8 - v 1 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 2 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. 3 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 4 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .
2008-04-08 rev. 2.5 page 4 spu04n60s5 spd04n60s5 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 4.5 a inverse diode direct current, pulsed i sm - - 9 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =350v, i f = i s , d i f /d t =100a/s - 900 1530 ns reverse recovery charge q rr - 3.2 - c typical transient thermal characteristics symbol value unit symbol value unit typ. typ. thermal resistance r th1 0.039 k/w r th2 0.074 r th3 0.132 r th4 0.555 r th5 0.529 r th6 0.169 thermal capacitance c th1 0.00007347 ws/k c th2 0.0002831 c th3 0.0004062 c th4 0.001215 c th5 0.00276 c th6 0.029 external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
2008-04-08 rev. 2.5 page 5 spu04n60s5 spd04n60s5 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 5 10 15 20 25 30 35 40 45 w 55 spu04n60s5 p tot 2 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 3 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -5 10 -4 10 -3 10 -2 10 -1 s t p -2 10 -1 10 0 10 1 10 k/w z thjc 4 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 2 4 6 8 10 a 14 i d 6.5v 7v 7.5v 8v 8.5v 9v 9.5v 20v 12v 10v
2008-04-08 rev. 2.5 page 6 spu04n60s5 spd04n60s5 5 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 2 4 a 8 i d 6v 6.5v 7v 7.5v 8v 8.5v 9v 20v 12v 10v 9.5v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 1 2 3 4 5 6 7 a 8.5 i d 1 1.5 2 2.5 3 3.5 4 m 5 r ds(on) 20v 12v 10v 9v 8.5v 8v 7.5v 7v 6.5v 6v 7 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 2.8 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5.5 spu04n60s5 r ds(on) typ 98% 8 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 2 4 6 8 10 12 14 16 v 20 v gs 0 2 4 6 8 10 12 a 16 i d
2008-04-08 rev. 2.5 page 7 spu04n60s5 spd04n60s5 9 typ. gate charge v gs = f ( q gate ) parameter: i d = 4.5 a pulsed 0 4 8 12 16 20 nc 26 q gate 0 2 4 6 8 10 12 v 16 spu04n60s5 v gs 0.2 v ds max 0.8 v ds max 10 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -2 10 -1 10 0 10 1 10 a spu04n60s5 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 11 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 0.5 1 1.5 2 2.5 3 3.5 4 a 5 i ar t j(start) =25c t j(start) =125c 12 avalanche energy e as = f ( t j ) par.: i d = 3.4 a, v dd = 50 v 20 40 60 80 100 120 c 160 t j 0 20 40 60 80 100 120 mj 160 e as
2008-04-08 rev. 2.5 page 8 spu04n60s5 spd04n60s5 13 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 540 560 580 600 620 640 660 680 v 720 spu04n60s5 v (br)dss 14 avalanche power losses p ar = f ( f ) parameter: e ar =0.4mj 10 4 10 5 10 6 hz f 0 25 50 75 100 125 150 w 200 p ar 15 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 400 v 600 v ds 0 10 1 10 2 10 3 10 4 10 pf c c iss c oss c rss 16 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 400 v 600 v ds 0 0.5 1 1.5 2 2.5 j 3.5 e oss
2008-04-08 rev. 2.5 page 9 spu04n60s5 spd04n60s5 definition of diodes switching characteristics
2008-04-08 rev. 2.5 page 10 spu04n60s5 spd04n60s5 p g -to252-3-1, pg-to252-3-11, pg-to252-3-21 (d-pak)
2008-04-08 rev. 2.5 page 11 spu04n60s5 spd04n60s5 p g -to251-3-1, pg-to251-3-21 (i-pak)
2008-04-08 rev. 2.5 page 12 spu04n60s5 spd04n60s5

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